Datasheet > FDMC8032L

FDMC8032L

更新时间： 2024-11-19 11:14:51

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	272K
描述
双 N 沟道 PowerTrench® MOSFET 40V，7A，20mΩ

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中文翻译

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FDMC8032L 数据手册

DATA SHEET

www.onsemi.com

MOSFET – Dual N-Channel,

POWERTRENCH⁾

40 V, 7 A, 20 mW

FDMC8032L

General Description

This device includes two 40 V N−Channel MOSFETs in a dual

Power 33 (3 mm x 3 mm MLP) package. The package is enhanced for

exceptional thermal performance.

Features

Pin 1

G1 S1 S1 S1

• Max r

= 20 mW at V = 10 V, I = 7 A

GS D

DS(on)

= 27 mW at V = 4.5 V, I = 6 A

DS(on)

• Low Inductance Packaging Shortens Rise/Fall Times

• Lower Switching Losses

• 100% Rg Tested

• This Device is Pb−Free and is RoHS Compliant

G2 S2 S2 S2

Power 33

Applications

• Battery Protection

• Load Switching

• Point of Load

WDFN8 3x3, 0.65P

CASE 511DG

MARKING DIAGRAM

MOSFET MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Symbol

VDS

Parameter

Drain to Source Voltage

Ratings Units

$Y&Z&2&K

FDMC

8032L

VGS

Gate to Source Voltage

I_D

Drain Current

− Continuous

− Pulsed

T_C= 25°C

T_A= 25°C

= onsemi Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

= Specific Device Code

(Note 1a)

(Note 4)

1.9

EAS

P_D

Single Pulse Avalanche Energy

Power Dissipation T_C= 25°C

Power Dissipation T_A= 25°C

(Note 3)

FDMC8032L

(Note 1a)

TJ, TSTG Operating and Storage Junction Temperature

Range

−55 to

°C

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

+150

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

February, 2023 − Rev. 5

FDMC8032L/D

12 3 4 5 6 7 8

中文翻译

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