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FDMC2523P PDF预览

FDMC2523P

更新时间: 2024-10-29 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 212K
描述
P 沟道,QFET® MOSFET,-150V,-3A,1.5Ω

FDMC2523P 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1.06
Samacsys Description:FDMC2523P P-Channel MOSFET, 1.8 A, 150 V QFET, 8-Pin MLP ON Semiconductor外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):25 W最大脉冲漏极电流 (IDM):12 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDMC2523P 数据手册

 浏览型号FDMC2523P的Datasheet PDF文件第2页浏览型号FDMC2523P的Datasheet PDF文件第3页浏览型号FDMC2523P的Datasheet PDF文件第4页浏览型号FDMC2523P的Datasheet PDF文件第5页浏览型号FDMC2523P的Datasheet PDF文件第6页浏览型号FDMC2523P的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel,  
QFET  
Pin 1  
G
S
S
S
D
-150 V, -3 A, 1.5 W  
D
D
D
Top  
Bottom  
FDMC2523P  
General Description  
WDFN8 3.3x3.3, 0.65P  
CASE 511DH  
These PChannel MOSFET enhancement mode power field effect  
transistors are produced using onsemi’s proprietary, planar stripe,  
DMOS technology. This advanced technology has been especially  
tailored to minimize onstate resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for low voltage  
applications such as audio amplifier, high efficiency switching  
DCDC converters, and DC motor control.  
MARKING DIAGRAM  
ZXYKK  
2523P  
Features  
Max R  
= 1.5 at V = 10 V, I = 1.5 A  
GS D  
Low C (Typical 10 pF)  
DS(on)  
rss  
Z
= Assembly Plant Code  
Fast Switching  
XY  
KK  
2523P  
= Date Code (Year &Week)  
= Lot Traceability Code  
= Specific Device Code  
Low Gate Charge (Typical 6.2 nC)  
Improved dv / dt Capability  
This Device is PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
Active Clamp Switch  
S
D
S
D
D
S
D
G
ORDERING INFORMATION  
Device  
Package  
Shipping  
FDMC2523P  
WDFN8  
3000 /  
(PbFree)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
March, 2023 Rev. 2  
FDMC2523P/D  

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