BUV20

更新时间： 2024-02-18 20:37:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管功率双极晶体管开关局域网
页数	文件大小	规格书
4页	44K
描述
HIGH CURRENT NPN SILICON TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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BUV20 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

BUV20 数据手册

BUV20

HIGH CURRENT NPN SILICON TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

NPN TRANSISTOR

HIGH CURRENT CAPABILITY

FAST SWITCHING SPEED

HIGH RUGGEDNESS

APPLICATIONS

■

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

■

SWITCHING REGULATORS

TO-3

(version "S")

DESCRIPTION

The BUV20 is silicon Multiepitaxial Planar NPN

transistor mounted in jedec TO-3 metal case. It is

intended for use in switching and linear

applications in military and industrial equipment.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CBO

V_CER

V_CEX

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (R_BE= 100Ω)

Collector-Emitter Voltage (V_BE= -1.5V)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

160

Unit

150

160

125

I_CM

Collector Peak Current

I_B

Base Current

P_tot

250

^oC

Total Power Dissipation at T_case≤ 25 C

T_stg

Storage Temperature

Junction Temperature

-65 to 200

200

T_j

1/4

January 2000

12 3 4

中文翻译

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