BUV21
SWITCHMODEt Series
NPN Silicon Power
Transistor
This device is designed for high speed, high current, high power
applications.
http://onsemi.com
Features
40 AMPERES
• High DC Current Gain:
NPN SILICON POWER
METAL TRANSISTOR
200 VOLTS − 250 WATTS
h
FE
min = 20 at I = 12 A
C
• Low V
, V
CE(sat)
CE(sat)
max = 0.6 V at I = 8 A
C
• Very Fast Switching Times:
TF max = 0.4 ms at I = 25 A
C
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
200
250
7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO(SUS)
V
CBO
V
EBO
TO−204AE (TO−3)
CASE 197A
Collector−Emitter Voltage (V = −1.5 V)
V
CEX
V
CER
250
240
BE
Collector−Emitter Voltage (R = 100 W)
BE
Collector−Current − Continuous
I
40
50
Adc
Apk
C
− Peak (PW v 10 ms)
I
CM
MARKING DIAGRAM
Base−Current Continuous
I
8
Adc
W
B
Total Device Dissipation @ T = 25_C
Operating and Storage Junction
Temperature Range
P
250
C
D
T , T
−65 to 200
_C
J
stg
BUV21G
AYWW
MEX
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q
0.7
_C/W
JC
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BUV21 = Device Code
G
A
Y
= Pb−Free Package
= Assembly Location
= Year
WW
MEX
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
BUV21
Package
Shipping
TO−204
100 Units / Tray
100 Units / Tray
BUV21G
TO−204
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 10
BUV21/D