BUV22

更新时间： 2024-11-03 22:27:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	141K
描述
SITCHMODE Series NPN Silicon Power Transistor

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BUV22 数据手册

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SEMICONDUCTOR TECHNICAL DATA

40 AMPERES

NPN SILICON

POWER

. . . designed for high current, high speed, high power applications.

METAL TRANSISTOR

250 VOLTS

•

High DC current gain: HFE min. = 20 at I = 10 A

Low V

: V

max. = 1.0 V at I = 10 A

250 WATTS

CE(sat) CE(sat)

Very fast switching times:

max. = 0.35 µs at I = 20 A

CASE 197A–05

TO–204AE

(TO–3)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

250

300

CEO(sus)

CBO

EBO

Collector–Emitter Voltage (V

= –1.5 V)

300

290

CEX

CER

Collector–Emitter Voltage (R

= 100 Ω)

Collector–Current — Continuous

— Peak (pw

Adc

Apk

10 ms)

Base–Current continuous

Adc

Watts

Total Power Dissipation @ T = 25 C

250

Operating and Storage Junction Temperature Range

T , T

–65 to 200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

C/W

1.0

0.8

0.6

0.4

0.2

120

160

200

, TEMPERATURE (°C)

Figure 1. Power Derating

SWITCHMODE is a trademark of Motorola, Inc.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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BUV22 替代型号

型号	品牌	替代类型	描述	数据表
BUV22G	ONSEMI	类似代替	SWITCHMODE Series NPN Silicon Power Transistor

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