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BUV26G PDF预览

BUV26G

更新时间: 2024-11-04 09:02:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 78K
描述
Switchmode Series NPN Silicon Power Transistor

BUV26G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:6.3
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:90 V配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):85 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUV26G 数据手册

 浏览型号BUV26G的Datasheet PDF文件第2页浏览型号BUV26G的Datasheet PDF文件第3页 
BUV26  
Switchmode Series NPN  
Silicon Power Transistor  
Designed for highspeed applications.  
Features  
http://onsemi.com  
Switchmode Power Supplies  
High Frequency Converters  
Relay Drivers  
12 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
90 VOLTS, 85 WATTS  
Driver  
PbFree Package is Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO(sus)  
V
V
180  
7.0  
CBO  
EBO  
Collector Current Continuous  
Collector Current Peak (pw 10 ms)  
I
20  
30  
Adc  
Apk  
C
TO220  
CASE 221A  
STYLE 1  
I
CM  
BUV26G  
AYWW  
Base Current Continuous  
I
4.0  
6.0  
Adc  
Adc  
B
I
BM  
1
Total Power Dissipation @ T = 25°C  
P
D
P
D
85  
65  
W
W
C
2
Total Power Dissipation @ T = 60°C  
C
3
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +175  
°C  
J
stg  
BUV26 = Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
1.76  
°C/W  
q
JC  
JunctiontoCase  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BUV26  
TO220  
50 Units/Rail  
50 Units/Rail  
TO220  
(PbFree)  
BUV26G  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2011 Rev. 2  
BUV26/D  

BUV26G 替代型号

型号 品牌 替代类型 描述 数据表
BUV26 ONSEMI

完全替代

Switchmode Series NPN Silicon Power Transistor
BUV26 STMICROELECTRONICS

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MEDIUM POWER NPN SILICON TRANSISTOR

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