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BUV27 PDF预览

BUV27

更新时间: 2024-10-01 09:02:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 53K
描述
NPN Silicon Power Transistor

BUV27 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.18
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:120 V配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUV27 数据手册

 浏览型号BUV27的Datasheet PDF文件第2页浏览型号BUV27的Datasheet PDF文件第3页浏览型号BUV27的Datasheet PDF文件第4页 
BUV27  
NPN Silicon Power  
Transistor  
This device is designed for use in switching regulators and motor  
control.  
Features  
http://onsemi.com  
Low Collection Emitter Saturation Voltage  
Fast Switching Speed  
Pb−Free Package is Available*  
POWER TRANSISTOR  
12 AMPERES  
120 VOLTS  
70 WATTS  
MARKING  
DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
120  
240  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Sustaining Voltage  
Collector−Emitter Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
V
CBO  
V
EBO  
4
TO−220AB  
CASE 221A  
STYLE 1  
BUV27G  
AYWW  
Collector Current  
− Continuous  
− Peak (Note 1)  
I
12  
20  
C
I
CM  
1
Base Current  
I
B
4.0  
Adc  
2
3
Total Device Dissipation (T = 25°C)  
P
D
70  
0.56  
W
W/°C  
C
Derate above 25°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
Rating  
T , T  
− 65 to 150  
°C  
J
stg  
BUV27 = Device Code  
A
= Assembly Location  
Y
= Year  
Symbol  
Max  
Unit  
WW  
G
= Work Week  
= Pb−Free Package  
Thermal Resistance,  
Junction−to−Case  
Junction−to−Ambient  
R
R
1.78  
62.5  
°C/W  
q
q
JC  
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
BUV27  
BUV27G  
Package  
Shipping  
TO−220AB  
50 per Rail  
50 per Rail  
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details,  
please download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2005 − Rev. 1  
BUV27/D  
 

BUV27 替代型号

型号 品牌 替代类型 描述 数据表
BUV27G ONSEMI

完全替代

NPN Silicon Power Transistor

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