5秒后页面跳转
BUV26 PDF预览

BUV26

更新时间: 2024-11-04 09:02:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 78K
描述
Switchmode Series NPN Silicon Power Transistor

BUV26 技术参数

是否无铅:含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:CASE 221A-09, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.4Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):20 A
集电极-发射极最大电压:90 V配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):85 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUV26 数据手册

 浏览型号BUV26的Datasheet PDF文件第2页浏览型号BUV26的Datasheet PDF文件第3页 
BUV26  
Switchmode Series NPN  
Silicon Power Transistor  
Designed for highspeed applications.  
Features  
http://onsemi.com  
Switchmode Power Supplies  
High Frequency Converters  
Relay Drivers  
12 AMPERES  
NPN SILICON  
POWER TRANSISTORS  
90 VOLTS, 85 WATTS  
Driver  
PbFree Package is Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
90  
Unit  
Vdc  
Vdc  
Vdc  
V
CEO(sus)  
V
V
180  
7.0  
CBO  
EBO  
Collector Current Continuous  
Collector Current Peak (pw 10 ms)  
I
20  
30  
Adc  
Apk  
C
TO220  
CASE 221A  
STYLE 1  
I
CM  
BUV26G  
AYWW  
Base Current Continuous  
I
4.0  
6.0  
Adc  
Adc  
B
I
BM  
1
Total Power Dissipation @ T = 25°C  
P
D
P
D
85  
65  
W
W
C
2
Total Power Dissipation @ T = 60°C  
C
3
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +175  
°C  
J
stg  
BUV26 = Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
1.76  
°C/W  
q
JC  
JunctiontoCase  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BUV26  
TO220  
50 Units/Rail  
50 Units/Rail  
TO220  
(PbFree)  
BUV26G  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
July, 2011 Rev. 2  
BUV26/D  

BUV26 替代型号

型号 品牌 替代类型 描述 数据表
BUV26G ONSEMI

完全替代

Switchmode Series NPN Silicon Power Transistor

与BUV26相关器件

型号 品牌 获取价格 描述 数据表
BUV26/D ETC

获取价格

Switchmode Series NPN Silicon Power Transistor
BUV26_03 STMICROELECTRONICS

获取价格

MEDIUM POWER NPN SILICON TRANSISTOR
BUV26_11 ONSEMI

获取价格

Switchmode Series NPN Silicon Power Transistor
BUV26A COMSET

获取价格

SILICON POWER TRANSISTORS
BUV26A ISC

获取价格

Silicon NPN Power Transistors
BUV26A SAVANTIC

获取价格

Silicon NPN Power Transistors
BUV26AF ISC

获取价格

Silicon NPN Power Transistors
BUV26F ISC

获取价格

Silicon NPN Power Transistors
BUV26G ONSEMI

获取价格

Switchmode Series NPN Silicon Power Transistor
BUV26G STMICROELECTRONICS

获取价格

Switchmode Series NPN Silicon Power Transistor