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BUV26A PDF预览

BUV26A

更新时间: 2024-11-04 06:44:51
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 92K
描述
Silicon NPN Power Transistors

BUV26A 数据手册

 浏览型号BUV26A的Datasheet PDF文件第2页浏览型号BUV26A的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUV26A  
DESCRIPTION  
·With TO-220C package  
·Low collector saturation voltage  
·Fast switching speed  
APPLICATIONS  
·For use in high frequency and efficiency  
converters,switching regulators and motor  
control  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Tc=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (peak)  
Base current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
200  
V
V
V
A
A
A
A
W
Open base  
100  
Open collector  
5
14  
ICM  
25  
IB  
4
IBM  
Base current (peak)  
6
Ptot  
Total power dissipation  
Max.operating junction temperature  
Storage temperature  
TC=25ꢀ  
65  
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction to mounting base  
1.92  
K/W  
Rth j-mb  

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