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BUV23_12 PDF预览

BUV23_12

更新时间: 2024-11-04 12:53:15
品牌 Logo 应用领域
COMSET 开关电源开关
页数 文件大小 规格书
2页 204K
描述
POWER SWITCH APPLICATIONS

BUV23_12 数据手册

 浏览型号BUV23_12的Datasheet PDF文件第2页 
NPN BUV23  
POWER SWITCH APPLICATIONS  
The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.  
They are intended for use in power switching appications in military and industrial equipments.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Ratings  
Value  
Unit  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector Current  
IB = 0  
IE = 0  
IC = 0  
VCEO  
325  
V
VCBO  
VEBO  
VCEX  
VCER  
IC  
400  
V
7.0  
V
V
BE = -1.5V  
BE <= 100  
400  
V
R
390  
V
30  
A
Collector Peak Current  
Base Current  
tp = 10ms  
ICM  
40  
A
IB  
6
A
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
@ TC = 25°  
Pt  
250  
Watts  
°C  
°C  
TJ  
200  
TStg  
-65 to +200  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
0.7  
Unit  
°C/W  
Thermal Resistance, Junction to Case  
RthJC  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise noted  
Test Condition(s)  
Symbol  
VCEO(SUS)  
Ratings  
Min Typ Mx Unit  
Collector-Emitter  
IC=200 mA, L= 25mH  
325  
-
-
V
Sustaining Voltage (1)  
Emitter-BaseBreakdown  
IC=0A , IE=50 mA  
7
-
-
V
VEB0(SUS)  
ICEO  
ICEX  
Voltage (1)  
VCE=260 V , IB=0A  
VCE= VCEX , VBE= -1.5V  
VCE= VCEX , VBE= -1.5V, Tcase = 125°C  
Collector Cutoff Current  
Collector Cutoff Current  
-
-
-
-
-
-
3
3
mA  
mA  
12  
COMSET SEMICONDUCTORS  
1/2  

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