Datasheet > BUV23

BUV23

更新时间： 2024-09-29 06:44:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	119K
描述
Silicon NPN Power Transistors

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中文翻译

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BUV23 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BUV23

DESCRIPTION

·With TO-3 package

·High DC current gain

·Very fast switching times

·Low collector saturation voltage

APPLICATIONS

·Designed for high current,high speed

and high power application.

PINNING(see fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings (Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

400

UNIT

Open emitter

Open base

325

Open collector

I_CM

Collector current-peak

Base current

I_B

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

250

ꢀ

T_j

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction to case

0.7

ꢀ/W

12 3

中文翻译

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