5秒后页面跳转
BUV22G PDF预览

BUV22G

更新时间: 2024-11-04 03:23:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 70K
描述
SWITCHMODE Series NPN Silicon Power Transistor

BUV22G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:BFM包装说明:CASE 197A-05, TO-3, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:2 weeks
风险等级:1.2Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):40 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-204AE
JESD-30 代码:O-MBFM-P2JESD-609代码:e1
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):8 MHzBase Number Matches:1

BUV22G 数据手册

 浏览型号BUV22G的Datasheet PDF文件第2页浏览型号BUV22G的Datasheet PDF文件第3页浏览型号BUV22G的Datasheet PDF文件第4页 
BUV22  
SWITCHMODEt Series  
NPN Silicon Power  
Transistor  
This device is designed for high speed, high current, high power  
applications.  
http://onsemi.com  
Features  
40 AMPERES  
High DC Current Gain:  
NPN SILICON POWER  
METAL TRANSISTOR  
250 VOLTS − 250 WATTS  
h
FE  
min = 20 at I = 10 A  
C
Low V  
, V  
CE(sat)  
CE(sat)  
max = 1.0 V at I = 10 A  
C
Very Fast Switching Times:  
TF max = 0.35 ms at I = 20 A  
C
Pb−Free Package is Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
250  
300  
7
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO(SUS)  
V
CBO  
V
EBO  
TO−204AE (TO−3)  
CASE 197A  
Collector−Emitter Voltage (V = −1.5 V)  
V
CEX  
V
CER  
300  
290  
BE  
Collector−Emitter Voltage (R = 100 W)  
BE  
Collector−Current − Continuous  
I
40  
50  
Adc  
Apk  
C
− Peak (PW v 10 ms)  
I
CM  
MARKING DIAGRAM  
Base−Current Continuous  
I
8
Adc  
W
B
Total Device Dissipation @ T = 25_C  
Operating and Storage Junction  
Temperature Range  
P
250  
C
D
T , T  
−65 to 200  
_C  
J
stg  
BUV22G  
AYWW  
MEX  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
0.7  
_C/W  
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BUV22 = Device Code  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
WW  
MEX  
= Work Week  
= Country of Origin  
ORDERING INFORMATION  
Device  
BUV22  
Package  
Shipping  
TO−204  
100 Units / Tray  
100 Units / Tray  
BUV22G  
TO−204  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 10  
BUV22/D  

BUV22G 替代型号

型号 品牌 替代类型 描述 数据表
BUV22 ONSEMI

类似代替

SITCHMODE Series NPN Silicon Power Transistor
BD239C ONSEMI

功能相似

NPN外延硅晶体管

与BUV22G相关器件

型号 品牌 获取价格 描述 数据表
BUV23 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO3
BUV23 MOTOROLA

获取价格

30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS
BUV23 SAVANTIC

获取价格

Silicon NPN Power Transistors
BUV23 ISC

获取价格

Silicon NPN Power Transistors
BUV23 COMSET

获取价格

POWER SWITCH APPLICATIONS
BUV23_12 COMSET

获取价格

POWER SWITCH APPLICATIONS
BUV24 ISC

获取价格

isc Silicon NPN Power Transistor
BUV24 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BUV25 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
BUV25 ISC

获取价格

isc Silicon NPN Power Transistor