Datasheet > BD239C

BD239C

更新时间： 2023-09-03 20:33:18

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
5页	146K
描述
NPN外延硅晶体管

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BD239C 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.64	最大集电极电流 (IC)：	2 A
配置：	Single	最小直流电流增益 (hFE)：	15
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	30 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BD239C 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

12 3 4 5

中文翻译

下载PDF

BD239C 替代型号

型号	品牌	替代类型	描述	数据表
MJ802G	ONSEMI	功能相似	High?Power NPN Silicon Transistor
MJE802G	ONSEMI	功能相似	4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
BUV22G	ONSEMI	功能相似	SWITCHMODE Series NPN Silicon Power Transistor

与BD239C相关器件

型号	品牌	获取价格	描述	数据表
BD239C_07	STMICROELECTRONICS	获取价格	NPN power transistor
BD239C16	MOTOROLA	获取价格	2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C16A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6200	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6203	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6226	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6255	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6258	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6261	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6263	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

与BD239C相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

17
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

16
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

14
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

BD239C

BD239C 技术参数

BD239C 数据手册

BD239C 替代型号

与BD239C相关器件

与BD239C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BD239C

BD239C 技术参数

BD239C 数据手册

BD239C 替代型号

与BD239C相关器件

与BD239C相关文章

您还可以找

您在本页遇到什么问题？