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BD239C_07

更新时间： 2024-12-01 04:09:11

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BD239C_07 数据手册

BD239C

NPN power transistor

Features

■ NPN transistor

Applications

■ General purpose switching and amplifier

transistor

Description

The device is manufactured in Planar technology

with “Base Island” layout. The resulting transistor

shows exceptional high gain performance

coupled with very low saturation voltage. The

PNP type is the BD240C.

TO-220

Figure 1.

Internal schematic diagram

Table 1.

Order code

BD239C

Device summary

Marking

Package

TO-220

Packaging

BD239C

Tube

July 2007

Rev 2

1/9

www.st.com

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
BD239C16	MOTOROLA	获取价格	2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C16A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6200	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6203	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6226	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6255	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6258	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6261	RENESAS	获取价格	4A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239C-6263	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BD239C-6264	RENESAS	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast