Datasheet > BUV20D

BUV20D

更新时间： 2024-02-24 22:19:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	66K
描述
SWITCHMODE Series NPN Silicon Power Transistor

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中文翻译

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技术参数
数据手册

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BUV20D 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

BUV20D 数据手册

ON Semiconductort

BUV20

BUV60

SWITCHMODEt Series

NPN Silicon Power Transistor

. . . designed for high speed, high current, high power applications.

50 AMPERES

NPN SILICON

POWER

• High DC current gain:

min = 20 at I = 25 A

METAL TRANSISTOR

125 VOLTS

= 10 at I = 50 A

• Low V

CE(sat)

250 WATTS

max. = 0.6 V at I = 25 A

CE(sat)

= 0.9 V at I = 50 A

• Very fast switching times:

T = 0.25 µs at I = 50 A

MAXIMUM RATINGS

Rating

Symbol

BUV20

BUV60

Unit

Vdc

Collector–Emititer Voltage

Collector–Base Voltage

Emitter–Base Voltage

125

CEO(sus)

CASE 197A–05

TO–204AE

(TO–3)

CBO

EBO

160

260

Collector–Emitter Voltage (V

–1.5 V)

CEX

160

150

260

Collector–Emitter voltage (R

CER

Vdc

100 Ω)

Collector–Current — Continuous

— Peak (PW v

Adc

Apk

10 ms)

Base–Current continuous

Adc

Total Power Dissipation @ T

250

Watts

25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to 200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

BUV20

BUV60

Unit

Thermal Resistance, Junction to

Case

0.7

_C/W

1.0

0.8

0.6

0.4

0.2

120

160

200

T , TEMPERATURE (°C)

Figure 1. Power Derating

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

May, 2001 – Rev. 10

BUV20/D

12 3 4

中文翻译

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