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AUIRF6215S

更新时间： 2024-11-07 19:50:31
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 828K
描述
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2

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AUIRF6215S 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.25其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：310 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (Abs) (ID)：13 A最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.29 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：110 W最大脉冲漏极电流 (IDM)：44 A
参考标准：AEC-Q101子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

AUIRF6215S 数据手册

 浏览型号AUIRF6215S的Datasheet PDF文件第2页浏览型号AUIRF6215S的Datasheet PDF文件第3页浏览型号AUIRF6215S的Datasheet PDF文件第4页浏览型号AUIRF6215S的Datasheet PDF文件第5页浏览型号AUIRF6215S的Datasheet PDF文件第6页浏览型号AUIRF6215S的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF6215S  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l P-Channel  
D
VDSS  
-150V  
0.29  
-13A  
l
Dynamic dV/dT Rating  
G
RDS(on) max.  
ID  
l 175°COperatingTemperature  
l Fast Switching  
S
l
Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
l Lead-Free,RoHSCompliant  
l Automotive Qualified *  
D
Description  
S
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and rugge-  
dized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in  
Automotive and a wide variety of other applications.  
D
G
D2Pak  
AUIRF6215S  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
-13  
Units  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
A
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
D
-9.0  
-44  
D
DM  
P
P
@TA = 25°C  
@TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
3.8  
W
D
110  
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
0.71  
± 20  
W/°C  
V
V
GS  
EAS  
IAR  
310  
-6.6  
11  
mJ  
A
Repetitive Avalanche Energy  
EAR  
dv/dt  
mJ  
Peak Diode Recovery dv/dt  
Operating Junction and  
-5.0  
V/ns  
°C  
T
T
-55 to + 175  
J
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
300  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.4  
Units  
Junction-to-Case  
R  
R  
–––  
–––  
°C/W  
JC  
JA  
Junction-to-Ambient (PCB Mount, steady state)  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2013 International Rectifier  
March 29, 2013  
1
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AUIRF6215S 替代型号

型号 品牌 替代类型 描述 数据表
IRF6215STRLPBF INFINEON

功能相似

 Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRRPBF INFINEON

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 Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215SPBF INFINEON

功能相似

 HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.

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