5秒后页面跳转
IRF6215STRRPBF PDF预览

IRF6215STRRPBF

更新时间: 2024-11-12 13:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 127K
描述
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

IRF6215STRRPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:5.02其他特性:AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级(Eas):310 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.29 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):110 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF6215STRRPBF 数据手册

 浏览型号IRF6215STRRPBF的Datasheet PDF文件第2页浏览型号IRF6215STRRPBF的Datasheet PDF文件第3页浏览型号IRF6215STRRPBF的Datasheet PDF文件第4页浏览型号IRF6215STRRPBF的Datasheet PDF文件第5页浏览型号IRF6215STRRPBF的Datasheet PDF文件第6页浏览型号IRF6215STRRPBF的Datasheet PDF文件第7页 
PD - 91479B  
IRF6215  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = -150V  
RDS(on) = 0.29Ω  
l P-Channel  
G
l Fully Avalanche Rated  
ID = -13A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in a wide variety of applications.  
The TO-220 package is universally preferred for all  
commercial-industrialapplicationsatpowerdissipation  
levels to approximately 50 watts. The low thermal  
resistance and low package cost of the TO-220  
contribute to its wide acceptance throughout the  
industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
-13  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current   
-9.0  
A
-44  
PD @TC = 25°C  
Power Dissipation  
110  
W
W/°C  
V
Linear Derating Factor  
0.71  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
± 20  
Single Pulse Avalanche Energy‚  
Avalanche Current  
310  
mJ  
A
-6.6  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
11  
mJ  
V/ns  
-5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
Units  
RθJC  
RθCS  
RθJA  
1.4  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
5/13/98  

IRF6215STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6215SPBF INFINEON

完全替代

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.
AUIRF6215STRL INFINEON

类似代替

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met
IRF6215STRLPBF INFINEON

类似代替

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Met

与IRF6215STRRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6216 INFINEON

获取价格

SMPS MOSFET
IRF6216PBF INFINEON

获取价格

HEXFET Power MOSFET
IRF6216PBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Meta
IRF6216TR INFINEON

获取价格

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Meta
IRF6216TRPBF INFINEON

获取价格

Reset Switch for Active Clamp Reset DC-DC converters
IRF6216TRPBF-1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Meta
IRF6217 INFINEON

获取价格

HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)
IRF6217PBF INFINEON

获取价格

SMPS MOSFET HEXFET㈢Power MOSFET
IRF6217PBF-1 INFINEON

获取价格

Industry-standard pinout SO-8 Package
IRF6217PBF-1_15 INFINEON

获取价格

Industry-standard pinout SO-8 Package