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IRF6216TRPBF PDF预览

IRF6216TRPBF

更新时间: 2024-09-24 12:32:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体转换器开关晶体管光电二极管PC
页数 文件大小 规格书
8页 129K
描述
Reset Switch for Active Clamp Reset DC-DC converters

IRF6216TRPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:15 weeks风险等级:5.41
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:879086Samacsys Pin Count:8
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:Small Outline Packages
Samacsys Footprint Name:IRF6216TRPBFSamacsys Released Date:2019-01-15 03:57:29
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (ID):2.2 A
最大漏源导通电阻:0.24 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF6216TRPBF 数据手册

 浏览型号IRF6216TRPBF的Datasheet PDF文件第2页浏览型号IRF6216TRPBF的Datasheet PDF文件第3页浏览型号IRF6216TRPBF的Datasheet PDF文件第4页浏览型号IRF6216TRPBF的Datasheet PDF文件第5页浏览型号IRF6216TRPBF的Datasheet PDF文件第6页浏览型号IRF6216TRPBF的Datasheet PDF文件第7页 
SMPS MOSFET  
PD - 95293  
IRF6216PbF  
HEXFET® Power MOSFET  
Applications  
l Reset Switch for Active Clamp Reset  
VDSS  
RDS(on) max  
ID  
DC-DC converters  
l Lead-Free  
-150V 0.240W@VGS =-10V -2.2A  
Benefits  
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design (See  
App. Note AN1001)  
A
1
2
3
4
8
7
D
S
S
D
6
5
S
G
D
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
-2.2  
-1.9  
-19  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
A
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
± 20  
7.8  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt  
Operating Junction and  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „ are on page 8  
www.irf.com  
1
06/06/05  

IRF6216TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6216TR INFINEON

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