IRF6218SHR

更新时间： 2024-09-24 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管脉冲局域网
页数	文件大小	规格书
7页	122K
描述
Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3/2

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中文翻译

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数据手册

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IRF6218SHR 数据手册

PD - 95862

SMPS MOSFET

IRF6218

HEXFET^®Power MOSFET

Applications

l Reset Switch for Active Clamp

V_DSS

R_DS(on)max

I_D

150m @V_GS= -10V

-150V

-27A

Reset DC-DC converters

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-150

± 20

-27

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

-19

-110

250

@T = 25°C

Maximum Power Dissipation

Linear Derating Factor

1.6

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.61

–––

Units

R_θ

°C/W

Junction-to-Case

R_θ

0.50

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Notes through are on page 7

www.irf.com

04/22/04

12 3 4 5 6 7

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