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IRF622-004PBF PDF预览

IRF622-004PBF

更新时间: 2024-11-29 09:38:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET

IRF622-004PBF 数据手册

  

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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF622-011PBF INFINEON

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4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET
IRF622-012PBF INFINEON

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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF622-013 INFINEON

获取价格

Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF622-013PBF INFINEON

获取价格

Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met