是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 4.4 A | 最大漏源导通电阻: | 1.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 17 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF622-001PBF | INFINEON |
获取价格 |
4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF622-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-003PBF | INFINEON |
获取价格 |
4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF622-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-004PBF | INFINEON |
获取价格 |
4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET | |
IRF622-005PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-010 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRF622-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met |