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IRF622-002PBF PDF预览

IRF622-002PBF

更新时间: 2024-11-29 03:45:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 42K
描述
Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRF622-002PBF 数据手册

  

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4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
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Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF622-011 INFINEON

获取价格

Power Field-Effect Transistor, 4.4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
IRF622-011PBF INFINEON

获取价格

4.4A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET