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IRF6217PBF-1_15 PDF预览

IRF6217PBF-1_15

更新时间: 2024-11-13 01:19:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 200K
描述
Industry-standard pinout SO-8 Package

IRF6217PBF-1_15 数据手册

 浏览型号IRF6217PBF-1_15的Datasheet PDF文件第2页浏览型号IRF6217PBF-1_15的Datasheet PDF文件第3页浏览型号IRF6217PBF-1_15的Datasheet PDF文件第4页浏览型号IRF6217PBF-1_15的Datasheet PDF文件第5页浏览型号IRF6217PBF-1_15的Datasheet PDF文件第6页浏览型号IRF6217PBF-1_15的Datasheet PDF文件第7页 
IRF6217PbF-1  
HEXFET® Power MOSFET  
VDS  
RDS(on) max  
(@VGS = -10V)  
Qg (typical)  
ID  
-150  
2.4  
6
V
Ω
A
1
2
3
4
8
D
S
S
7
D
nC  
A
6
S
G
D
5
-0.7  
D
(@TA = 25°C)  
SO-8  
Top View  
Features  
Industry-standard pinout SO-8 Package  
Benefits  
Multi-Vendor Compatibility  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Industrial qualification  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Form  
Base Part Number  
Package Type  
Orderable Part Number  
Quantity  
Tube/Bulk  
Tape and Reel  
95  
4000  
IRF6217PbF-1  
IRF6217TRPbF-1  
IRF6217PbF-1  
SO-8  
Absolute Maximum Ratings  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
Max.  
-0.7  
-0.5  
-5.0  
2.5  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
A
PD @TA = 25°C  
Power Dissipation„  
W
W/°C  
V
Linear Derating Factor  
0.02  
± 20  
4.5  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
Peak Diode Recovery dv/dt  
Operating Junction and  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „ are on page 8  
1
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June 30, 2014  

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