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IRF6218 PDF预览

IRF6218

更新时间: 2024-09-23 21:53:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管脉冲局域网
页数 文件大小 规格书
7页 122K
描述
SMPS MOSFET

IRF6218 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
雪崩能效等级(Eas):210 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):27 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):110 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF6218 数据手册

 浏览型号IRF6218的Datasheet PDF文件第2页浏览型号IRF6218的Datasheet PDF文件第3页浏览型号IRF6218的Datasheet PDF文件第4页浏览型号IRF6218的Datasheet PDF文件第5页浏览型号IRF6218的Datasheet PDF文件第6页浏览型号IRF6218的Datasheet PDF文件第7页 
PD - 95862  
SMPS MOSFET  
IRF6218  
HEXFET® Power MOSFET  
Applications  
l Reset Switch for Active Clamp  
VDSS  
RDS(on) max  
ID  
150m @VGS = -10V  
-150V  
-27A  
Reset DC-DC converters  
Benefits  
D
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design (See  
App. Note AN1001)  
G
l Fully Characterized Avalanche Voltage  
and Current  
TO-220AB  
S
Absolute Maximum Ratings  
Parameter  
Max.  
-150  
± 20  
-27  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
I
I
I
@ T = 25°C  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
C
@ T = 100°C  
C
-19  
-110  
250  
DM  
P
@T = 25°C  
C
W
Maximum Power Dissipation  
D
Linear Derating Factor  
1.6  
W/°C  
dv/dt  
T
J
Peak Diode Recovery dv/dt  
Operating Junction and  
8.2  
V/ns  
°C  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.61  
–––  
62  
Units  
Rθ  
°C/W  
JC  
CS  
JA  
Junction-to-Case  
Rθ  
Rθ  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Notes  through „ are on page 7  
www.irf.com  
1
04/22/04  

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