IRF6218L

更新时间： 2024-11-12 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
9页	225K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRF6218L 数据手册

PD - 95863

IRF6218S

SMPS MOSFET

IRF6218L

HEXFET^®Power MOSFET

Applications

l Reset Switch for Active Clamp

V_DSS

R_DS(on)max

I_D

Reset DC-DC converters

150m @V_GS= -10V

-150V

-27A

Benefits

l Low Gate to Drain Charge to Reduce

Switching Losses

l Fully Characterized Capacitance Including

Effective C_OSSto Simplify Design (See

App. Note AN1001)

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRF6218S

TO-262

IRF6218L

Absolute Maximum Ratings

Parameter

Max.

-150

± 20

-27

Units

V_DS

V_GS

Drain-to-Source Voltage

Gate-to-Source Voltage

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

-19

-110

250

@T = 25°C

Maximum Power Dissipation

Linear Derating Factor

1.6

W/°C

dv/dt

Peak Diode Recovery dv/dt

Operating Junction and

8.2

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.61

Units

R_θ

°C/W

Junction-to-Case

Junction-to-Ambient (PCB Mounted, steady state)

R_θ

–––

Notes through are on page 9

www.irf.com

4/22/04

12 3 4 5 6 7...9

中文翻译

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与IRF6218L相关器件

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IRF6218PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF6218S	INFINEON	获取价格	HEXFET Power MOSFET
IRF6218SHR	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Met
IRF6218SPBF	INFINEON	获取价格	暂无描述
IRF6218STRLHR	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Met
IRF6218STRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Met
IRF6218STRR	INFINEON	获取价格	暂无描述
IRF621FI	STMICROELECTRONICS	获取价格	4A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET
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IRF622	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 7A, 150-200V