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IRF6217PBF PDF预览

IRF6217PBF

更新时间: 2024-11-12 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
8页 126K
描述
SMPS MOSFET HEXFET㈢Power MOSFET

IRF6217PBF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.64
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):0.7 A最大漏源导通电阻:2.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF6217PBF 数据手册

 浏览型号IRF6217PBF的Datasheet PDF文件第2页浏览型号IRF6217PBF的Datasheet PDF文件第3页浏览型号IRF6217PBF的Datasheet PDF文件第4页浏览型号IRF6217PBF的Datasheet PDF文件第5页浏览型号IRF6217PBF的Datasheet PDF文件第6页浏览型号IRF6217PBF的Datasheet PDF文件第7页 
PD - 95252  
IRF6217PbF  
HEXFET® Power MOSFET  
SMPS MOSFET  
Applications  
l Reset Switch for Active Clamp Reset  
VDSS  
RDS(on) max  
ID  
-150V  
2.4W@VGS =-10V -0.7A  
DC to DC converters  
l Lead-Free  
Benefits  
A
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design (See  
App. Note AN1001)  
1
2
3
4
8
D
S
S
7
D
6
S
G
D
5
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
-0.7  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
-0.5  
A
-5.0  
PD @TA = 25°C  
Power Dissipation„  
2.5  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 20  
Peak Diode Recovery dv/dt  
Operating Junction and  
4.5  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient „  
–––  
50  
°C/W  
Notes  through „ are on page 8  
www.irf.com  
1
10/04/04  

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