5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRF3205ZSTRR
AUIRF3205ZSTRR PDF预览

AUIRF3205ZSTRR

更新时间： 2024-09-13 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 331K
描述
HEXFET? Power MOSFET

阅读下载

中文翻译

获取价格

AUIRF3205ZSTRR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：250 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.0065 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：170 W最大脉冲漏极电流 (IDM)：440 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF3205ZSTRR 数据手册

 浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第2页浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第3页浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第4页浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第5页浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第6页浏览型号AUIRF3205ZSTRR的Datasheet PDF文件第7页 
PD - 97542  
AUTOMOTIVE GRADE  
AUIRF3205Z  
AUIRF3205ZS  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
D
S
V(BR)DSS  
55V  
6.5m  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
110A  
75A  
●
●
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of  
this design are a 175°C junction operating tempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
this design an extremely efficient and reliable device  
for use in Automotive applications and a wide variety  
of other applications.  
D
D
S
S
D
G
D
G
D2Pak  
TO-220AB  
AUIRF3205Z  
AUIRF3205ZS  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.  
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power  
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Max.  
110  
78  
Units  
(Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
@ T = 25°C  
C
75  
440  
DM  
P
@T = 25°C  
C
Power Dissipation  
170  
1.1  
W
W/°C  
V
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
± 20  
GS  
EAS  
180  
250  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
EAS (tested )  
Avalanche Current  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.90  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...14

中文翻译

下载PDF

AUIRF3205ZSTRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3205ZSTRL INFINEON

完全替代

 HEXFET? Power MOSFET
AUIRF3205ZS INFINEON

完全替代

 HEXFET? Power MOSFET
IRF3205ZSPBF INFINEON

完全替代

 AUTOMOTIVE MOSFET

与AUIRF3205ZSTRR相关器件

型号 品牌 获取价格 描述 数据表
AUIRF3305 INFINEON

获取价格

 		Advanced Planar Technology
AUIRF3315S INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3415 INFINEON

获取价格

 		ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF3504 INFINEON

获取价格

 		Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
AUIRF3710Z INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZS INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZSTRL INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZSTRR INFINEON

获取价格

 		HEXFET® Power MOSFET

与AUIRF3205ZSTRR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证