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AUIRF3205ZSTRL

更新时间： 2024-09-13 08:40:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
14页	331K
描述
HEXFET? Power MOSFET

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替代型号

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AUIRF3205ZSTRL 数据手册

PD - 97542

AUTOMOTIVE GRADE

AUIRF3205Z

AUIRF3205ZS

HEXFET^®Power MOSFET

Features

●

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to

Tjmax

V_(BR)DSS

55V

6.5m

R_DS(on)max.

Ω

I_{D (Silicon Limited)}

I_{D (Package Limited)}

110A

75A

●

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

D²Pak

TO-220AB

AUIRF3205Z

AUIRF3205ZS

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise

specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

110

Units

(Silicon Limited)

@ T = 25°C

@ T = 100°C

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 25°C

440

@T = 25°C

Power Dissipation

170

1.1

W/°C

Linear Derating Factor

Gate-to-Source Voltage

± 20

E_AS

180

250

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

E_AS(tested )

Avalanche Current

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.90

–––

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

07/23/2010

12 3 4 5 6 7...14

中文翻译

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AUIRF3205ZSTRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF3205ZSTRR	INFINEON	完全替代	HEXFET? Power MOSFET
IRF3205ZSTRLPBF	INFINEON	类似代替	Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
AUIRF3205ZS	INFINEON	类似代替	HEXFET? Power MOSFET

与AUIRF3205ZSTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRF3205ZSTRR	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRF3305	INFINEON	获取价格	Advanced Planar Technology
AUIRF3315S	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRL	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRR	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3415	INFINEON	获取价格	ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF3504	INFINEON	获取价格	Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
AUIRF3710Z	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF3710ZS	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF3710ZSTRL	INFINEON	获取价格	HEXFETÂ® Power MOSFET

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