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AUIRF3805 PDF预览

AUIRF3805

更新时间: 2024-11-05 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 384K
描述
HEXFET? Power MOSFET

AUIRF3805 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.33
Is Samacsys:N其他特性:AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):940 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):160 A最大漏极电流 (ID):160 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):890 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRF3805 数据手册

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PD - 96319  
AUTOMOTIVE GRADE  
AUIRF3805  
AUIRF3805S  
AUIRF3805L  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
V(BR)DSS  
55V  
D
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
2.6m  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
3.3mΩ  
210A  
G
S
160A  
D
D
D
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improved repetitive avalanche rating. These features  
combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide  
variety of other applications.  
S
D
S
S
D
G
D
G
G
D2Pak  
AUIRF3805S  
TO-262  
TO-220AB  
AUIRF3805  
AUIRF3805L  
G
D
S
AbsoluteMaximumRatings  
Gate  
Drain  
Source  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
210  
150  
160  
Units  
(Silicon Limited)  
(Silicon Limited)  
(Package limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
@ T = 25°C  
C
890  
DM  
300  
2.0  
± 20  
Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
W
W/°C  
V
P
@T = 25°C  
D
C
V
GS  
EAS  
EAS (Tested )  
IAR  
650  
940  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
Storage Temperature Range  
J
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
0.50  
–––  
Max.  
0.5  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
°C/W  
Junction-to-Ambient (PCB Mount)  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  

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