Datasheet > AUIRF3808

AUIRF3808

更新时间： 2024-11-07 21:09:43

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	229K
描述
Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRF3808 数据手册

PD - 97697A

AUTOMOTIVE GRADE

AUIRF3808

HEXFET^®Power MOSFET

Features

l Advanced Planar Technology

l Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Repetitive Avalanche Allowed

up to Tjmax

V_(BR)DSS

75V

R_DS(on)typ.

5.9m

7.0m



max

I_D

140A

l Lead-Free, RoHS Compliant

l Automotive Qualified*

Description

Specifically designed for Automotive applications,

this Stripe Planar design of HEXFET® Power

MOSFETs utilizes the latest processing techniques to

achieve low on-resistance per silicon area. This ben-

efit combined with the fast switching speed and rugge-

dized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in Auto-

motive and a wide variety of other applications.

TO-220AB

AUIRF3808

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

140

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

550

330

2.2

Power Dissipation

@T = 25°C

W/°C

Linear Derating Factor

Gate-to-Source Voltage

± 20

E_AS

I_AR

430

Single Pulse Avalanche Energy (Thermally Limited)

See Fig. 12a, 12b, 15, 16

5.5

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 175

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.45

–––

Units

R_JC

R_CS

R_JA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

11/15/11

12 3 4 5 6 7...12

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AUIRF3808 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF3808STRL	INFINEON	功能相似	HEXFET Power MOSFET
AUIRF3808S	INFINEON	功能相似	HEXFET Power MOSFET

与AUIRF3808相关器件

型号	品牌	获取价格	描述	数据表
AUIRF3808S	INFINEON	获取价格	HEXFET Power MOSFET
AUIRF3808STRL	INFINEON	获取价格	HEXFET Power MOSFET
AUIRF3808STRR	INFINEON	获取价格	HEXFET Power MOSFET
AUIRF4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF4104S	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF4104STRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF4104STRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF44VZSTRL	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRF4905	INFINEON	获取价格	Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
AUIRF4905L	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta

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