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AUIRF540ZSTRR

更新时间： 2024-09-17 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 328K
描述
HEXFET® Power MOSFET

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AUIRF540ZSTRR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
Is Samacsys：N其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：83 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：36 A最大漏极电流 (ID)：36 A
最大漏源导通电阻：0.0265 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：92 W
最大脉冲漏极电流 (IDM)：140 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF540ZSTRR 数据手册

 浏览型号AUIRF540ZSTRR的Datasheet PDF文件第2页浏览型号AUIRF540ZSTRR的Datasheet PDF文件第3页浏览型号AUIRF540ZSTRR的Datasheet PDF文件第4页浏览型号AUIRF540ZSTRR的Datasheet PDF文件第5页浏览型号AUIRF540ZSTRR的Datasheet PDF文件第6页浏览型号AUIRF540ZSTRR的Datasheet PDF文件第7页 
PD - 96326  
AUTOMOTIVE GRADE  
AUIRF540Z  
AUIRF540ZS  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
AdvancedProcessTechnology  
D
V(BR)DSS  
100V  
UltraLowOn-Resistance  
175°COperatingTemperature  
FastSwitching  
RDS(on) typ.  
21m  
Ω
RepetitiveAvalancheAlloweduptoTjmax  
Lead-Free,RoHSCompliant  
AutomotiveQualified*  
G
max.  
26.5m  
36A  
Ω
ID  
S
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
siliconarea. Additionalfeaturesofthisdesign area175°C  
junctionoperatingtemperature, fastswitchingspeedand  
improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and  
reliabledeviceforuseinAutomotiveapplicationsandawide  
varietyofotherapplications.  
D2Pak  
AUIRF540ZS  
TO-220AB  
AUIRF540Z  
G
D
S
Gate  
Drain  
Source  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
36  
25  
140  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Units  
I
I
I
@ T = 25°C  
C
D
D
A
@ T = 100°C  
C
DM  
92  
0.61  
± 20  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
EAS (Tested )  
IAR  
83  
120  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
mJ  
-55 to + 175  
T
T
J
°C  
STG  
300(1.6mm from case)  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
0.50  
–––  
Max.  
1.64  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
°C/W  
Junction-to-Ambient (PCB Mount)  
–––  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
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