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AUIRF4104

更新时间： 2024-11-25 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 350K
描述
HEXFET® Power MOSFET

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AUIRF4104 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：ROHS COMPLIANT PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.41雪崩能效等级（Eas）：220 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.0055 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：140 W
最大脉冲漏极电流 (IDM)：470 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF4104 数据手册

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PD - 97471A  
AUTOMOTIVE GRADE  
AUIRF4104  
AUIRF4104S  
Features  
O
O
O
O
O
O
Low On-Resistance  
HEXFET® Power MOSFET  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
V(BR)DSS  
D
40V  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
4.3m  
5.5m  
120A  
75A  
Ω
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
Ω
G
O
O
S
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest process-  
ing techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speedandimprovedrepetitiveavalancherating.These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
D2Pak  
AUIRF4104S  
TO-220AB  
AUIRF4104  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;  
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
I
Max.  
120  
84  
Units  
A
75  
470  
140  
Pulsed Drain Current  
@T = 25°C  
Power Dissipation  
C
DM  
P
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.95  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS  
120  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested )  
IAR  
EAR  
T
J
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
–––  
40  
Units  
°C/W  
Junction-to-Case  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat Greased Surface  
0.50  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
Note  to ‰ are on page 3  
www.irf.com  
1
3/29/10  
1234567...15

中文翻译

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AUIRF4104 替代型号

型号 品牌 替代类型 描述 数据表
IRF4104PBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
IRF4104 INFINEON

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 AUTOMOTIVE MOSFET

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AUIRF4905S INFINEON

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AUIRF4905STRL INFINEON

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