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AUIRF4104STRL PDF预览

AUIRF4104STRL

更新时间： 2024-11-27 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
15页 350K
描述
HEXFET® Power MOSFET

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AUIRF4104STRL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-XSSO-G2Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.18雪崩能效等级（Eas）：220 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.0055 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：140 W最大脉冲漏极电流 (IDM)：470 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF4104STRL 数据手册

 浏览型号AUIRF4104STRL的Datasheet PDF文件第2页浏览型号AUIRF4104STRL的Datasheet PDF文件第3页浏览型号AUIRF4104STRL的Datasheet PDF文件第4页浏览型号AUIRF4104STRL的Datasheet PDF文件第5页浏览型号AUIRF4104STRL的Datasheet PDF文件第6页浏览型号AUIRF4104STRL的Datasheet PDF文件第7页 
PD - 97471A  
AUTOMOTIVE GRADE  
AUIRF4104  
AUIRF4104S  
Features  
O
O
O
O
O
O
Low On-Resistance  
HEXFET® Power MOSFET  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
V(BR)DSS  
D
40V  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
4.3m  
5.5m  
120A  
75A  
Ω
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
Ω
G
O
O
S
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest process-  
ing techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speedandimprovedrepetitiveavalancherating.These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
D2Pak  
AUIRF4104S  
TO-220AB  
AUIRF4104  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;  
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to  
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
I
Max.  
120  
84  
Units  
A
75  
470  
140  
Pulsed Drain Current  
@T = 25°C  
Power Dissipation  
C
DM  
P
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.95  
± 20  
W/°C  
V
V
GS  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS  
120  
220  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
AS (tested )  
IAR  
EAR  
T
J
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
–––  
40  
Units  
°C/W  
Junction-to-Case  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat Greased Surface  
0.50  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
Note  to ‰ are on page 3  
www.irf.com  
1
3/29/10  
1234567...15

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AUIRF4104STRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF4104S INFINEON

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