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AUIRF4905S

更新时间： 2024-09-17 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
12页 608K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2

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中文翻译

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AUIRF4905S 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3/2Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：0.7雪崩能效等级（Eas）：140 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：42 A
最大漏极电流 (ID)：42 A最大漏源导通电阻：0.02 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：170 W
最大脉冲漏极电流 (IDM)：280 A参考标准：AEC-Q101
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF4905S 数据手册

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AUIRF4905S  
AUIRF4905L  
HEXFET® Power MOSFET  
AUTOMOTIVE GRADE  
Features  
VDSS  
-55V  
Advanced Planar Technology  
P-Channel MOSFET  
Low On-Resistance  
150°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
20m  
-70A  
-42A  
D
D
S
S
D
G
Description  
G
Specifically designed for Automotive applications, this cellular design of  
HEXFET® Power MOSFETs utilizes the latest processing techniques to  
achieve low on-resistance per silicon area. This benefit combined with the  
fast switching speed and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and a wide variety of other  
applications.  
TO-262  
AUIRF4905L  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRF4905L  
Package Type  
TO-262  
Orderable Part Number  
Quantity  
50  
50  
800  
AUIRF4905L  
AUIRF4905S  
AUIRF4905STRL  
Tube  
Tape and Reel Left  
AUIRF4905S  
D2-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
-70  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
-44  
-42  
A
IDM  
Pulsed Drain Current  
Maximum Power Dissipation  
Linear Derating Factor  
-280  
170  
1.3  
PD @TC = 25°C  
W
W/°C  
V
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
140  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
790  
IAR  
See Fig.15,16, 12a, 12b  
A
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 150  
300  
TSTG  
°C  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
40  
Units  
RJC  
RJA  
°C/W  
Junction-to-Ambient ( PCB Mount, steady state)   
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-13  
1234567...12

中文翻译

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AUIRF4905S 替代型号

型号 品牌 替代类型 描述 数据表
IRF4905STRRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta
IRF4905STRLPBF INFINEON

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 HEXFET® Power MOSFET
IRF4905SPBF INFINEON

类似代替

 HEXFET Power MOSFET

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