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AUIRF5210STRR PDF预览

AUIRF5210STRR

更新时间： 2024-11-07 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 220K
描述
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2

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AUIRF5210STRR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3/2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.14
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：120 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：38 A
最大漏极电流 (ID)：38 A最大漏源导通电阻：0.06 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：170 W
最大脉冲漏极电流 (IDM)：140 A参考标准：AEC-Q101
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF5210STRR 数据手册

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AUTOMOTIVE GRADE  
AUIRF5210S  
Features  
HEXFET® Power MOSFET  
l AdvancedPlanarTechnology  
l P-ChannelMOSFET  
l LowOn-Resistance  
D
V(BR)DSS  
-100V  
60m  
l
Dynamic dV/dT Rating  
RDS(on) max.  
ID  
G
l 175°COperatingTemperature  
l Fast Switching  
S
-38A  
l
Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
l Lead-Free,RoHSCompliant  
l Automotive Qualified *  
D
Description  
S
SpecificallydesignedforAutomotiveapplications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the  
designer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of  
otherapplications.  
D
G
D2Pak  
AUIRF5210S  
G
Gate  
D
S
Drain  
Source  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
-38  
Units  
I
I
I
@ TC = 25°C  
@ TC = 100°C  
A
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
D
-24  
D
-140  
3.1  
DM  
P
P
@TA = 25°C  
@TC = 25°C  
Maximum Power Dissipation  
W
D
Maximum Power Dissipation  
170  
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
1.3  
± 20  
W/°C  
V
V
GS  
EAS  
IAR  
120  
-23  
17  
mJ  
A
Repetitive Avalanche Energy  
EAR  
dv/dt  
mJ  
Peak Diode Recovery dv/dt  
Operating Junction and  
-7.4  
V/ns  
°C  
T
T
-55 to + 150  
J
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
300  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.75  
40  
Units  
Junction-to-Case  
R  
R  
–––  
–––  
°C/W  
JC  
JA  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/20/2012  
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AUIRF5210STRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF5210S INFINEON

功能相似

 Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Met
IRF5210S INFINEON

功能相似

 Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

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