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AUIRF3808STRR PDF预览

AUIRF3808STRR

更新时间: 2024-11-07 12:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 225K
描述
HEXFET Power MOSFET

AUIRF3808STRR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.14
其他特性:AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):430 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):106 A
最大漏极电流 (ID):106 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W最大脉冲漏极电流 (IDM):550 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRF3808STRR 数据手册

 浏览型号AUIRF3808STRR的Datasheet PDF文件第2页浏览型号AUIRF3808STRR的Datasheet PDF文件第3页浏览型号AUIRF3808STRR的Datasheet PDF文件第4页浏览型号AUIRF3808STRR的Datasheet PDF文件第5页浏览型号AUIRF3808STRR的Datasheet PDF文件第6页浏览型号AUIRF3808STRR的Datasheet PDF文件第7页 
PD - 97698A  
AUTOMOTIVE GRADE  
AUIRF3808S  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
D
Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
75V  
RDS(on) typ.  
5.9m  
7.0m  
G
max.  
S
ID  
106A  
Description  
SpecificallydesignedforAutomotiveapplications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing tech-  
niques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switch-  
ing speed and ruggedized device design that  
HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient  
and reliable device for use in Automotive and a  
wide variety of other applications.  
S
D
G
D2Pak  
AUIRF3808S  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
106  
Units  
75  
A
550  
PD @TC = 25°C  
200  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
1.3  
VGS  
EAS  
IAR  
± 20  
Gate-to-Source Voltage  
430  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
82  
See Fig. 12a, 12b, 15, 16  
5.5  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.75  
40  
Units  
°C/W  
RJC  
Junction-to-Case  
R  
Junction-to-Ambient (PCB Mounted, steady-state)  
–––  
JA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/29/11  

AUIRF3808STRR 替代型号

型号 品牌 替代类型 描述 数据表
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