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IRF3805 PDF预览

IRF3805

更新时间: 2024-09-23 22:31:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 361K
描述
AUTOMOTIVE MOSFET

IRF3805 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:LEAD FREE PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N其他特性:FAST SWITCHING
雪崩能效等级(Eas):730 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):220 A最大漏源导通电阻:0.0033 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):890 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF3805 数据手册

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PD - 95880  
IRF3805  
IRF3805S  
IRF3805L  
AUTOMOTIVE MOSFET  
Features  
l
HEXFET® Power MOSFET  
Advanced Process Technology  
D
l
l
l
l
Ultra Low On-Resistance  
VDSS = 55V  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 3.3mΩ  
G
Description  
ID = 75A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
D2Pak  
IRF3805S  
TO-262  
IRF3805L  
TO-220AB  
IRF3805  
Absolute Maximum Ratings  
Parameter  
Max.  
220  
160  
75  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
A
C
@ T = 25°C  
C
890  
130  
DM  
P
@T = 25°C  
Power Dissipation  
W
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
2.2  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
AS (Tested )  
730  
940  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
E
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
EAR  
mJ  
T
T
-55 to + 175  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
°C/W  
Junction-to-Case  
Rθ  
JC  
Rθ  
CS  
Rθ  
JA  
Rθ  
JA  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
0.50  
–––  
Junction-to-Ambient (PCB Mount)  
–––  
40  
www.irf.com  
1
10/21/04  

IRF3805 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3805 INFINEON

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HEXFET? Power MOSFET
IRF3805PBF INFINEON

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AUTOMOTIVE MOSFET

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