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AUIRF3805S-7P

更新时间： 2024-11-07 11:46:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
14页 303K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRF3805S-7P 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：SMALL OUTLINE, R-PSSO-G6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.08Is Samacsys：N
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：680 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：240 A
最大漏极电流 (ID)：160 A最大漏源导通电阻：0.0026 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：1000 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF3805S-7P 数据手册

 浏览型号AUIRF3805S-7P的Datasheet PDF文件第2页浏览型号AUIRF3805S-7P的Datasheet PDF文件第3页浏览型号AUIRF3805S-7P的Datasheet PDF文件第4页浏览型号AUIRF3805S-7P的Datasheet PDF文件第5页浏览型号AUIRF3805S-7P的Datasheet PDF文件第6页浏览型号AUIRF3805S-7P的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
PD - 96318  
AUIRF3805S-7P  
AUIRF3805L-7P  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
V(BR)DSS  
55V  
2.0m  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on) typ.  
Ω
G
max.  
2.6m  
Ω
S
S (Pin 2, 3, 5, 6, 7)  
G (Pin 1)  
ID  
240A  
Description  
D
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance  
per silicon area. Additional features of this design are  
a 175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating.  
These features combine to make this design an  
extremely efficient and reliable device for use in  
Automotive applications and a wide variety of other  
applications.  
S
S
S
S
S
S
S
S
S
S
G
G
D2Pak 7 Pin  
TO-263CA 7 Pin  
AUIRF3805L-7P  
AUIRF3805S-7P  
G
D
S
Gate  
Drain  
Source  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the  
device. These are stress ratings only; and functional operation of the device at these or any other condition  
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions  
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are  
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Max.  
Units  
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
240  
D
D
D
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
170  
160  
1000  
300  
A
DM  
P
@TC = 25°C  
W
D
Maximum Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
2.0  
W/°C  
V
V
EAS  
EAS (tested)  
IAR  
± 20  
GS  
440  
680  
mJ  
See Fig.12a,12b,15,16  
A
mJ  
EAR  
Repetitive Avalanche Energy  
dv/dt  
J
2.3  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
Storage Temperature Range  
T
-55 to + 175  
T
STG  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal ResMisotuanntincgetorque, 6-32 or M3 screw  
10 lbf•in (1.1N•m)  
Parameter  
Typ.  
–––  
0.50  
–––  
Max.  
0.50  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...14

中文翻译

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AUIRF3805S-7P 替代型号

型号 品牌 替代类型 描述 数据表
IRF3805STRL-7PP INFINEON

类似代替

 Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, M
IRF3805S-7P INFINEON

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 AUTOMOTIVE MOSFET
IRF3805S-7PPBF INFINEON

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 HEXFET㈢ Power MOSFET

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