Datasheet > AUIRF3315STRR

AUIRF3315STRR

更新时间： 2024-11-29 14:47:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	314K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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替代型号

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AUIRF3315STRR 数据手册

PD - 97733

AUTOMOTIVE GRADE

AUIRF3315S

HEXFET^®Power MOSFET

Features

l AdvancedPlanarTechnology

l LowOn-Resistance

V_DSS

R_DS(on)max.

150V

82m

Dynamic dV/dT Rating

l 175°COperatingTemperature

l Fast Switching



I_D

21A

Fully Avalanche Rated

l Repetitive Avalanche Allowed up to

Tjmax

l Lead-Free,RoHSCompliant

l Automotive Qualified *

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and rugge-

dized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in

Automotive and a wide variety of other applications.

D²Pak

AUIRF3315S

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

@ T_C= 25°C

@ T_C= 100°C

Pulsed Drain Current

@T_A= 25°C

@T_C= 25°C

Maximum Power Dissipation

3.8

Linear Derating Factor

Gate-to-Source Voltage

0.63

± 20

W/°C

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

350

Repetitive Avalanche Energy

E_AR

9.4

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

2.5

V/ns

°C

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

300

Thermal Resistance

Parameter

Typ.

–––

Max.

1.6

Units

°C/W

Junction-to-Case

R_JC

R_JA

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/3/11

12 3 4 5 6 7...12

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AUIRF3315STRR 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF3315STRL	INFINEON	类似代替	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

与AUIRF3315STRR相关器件

型号	品牌	获取价格	描述	数据表
AUIRF3415	INFINEON	获取价格	ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
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AUIRF3805	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRF3805L	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRF3805L-7P	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF3805S	INFINEON	获取价格	HEXFET? Power MOSFET

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