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AUIRF3315STRL PDF预览

AUIRF3315STRL

更新时间： 2024-11-30 03:01:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 314K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRF3315STRL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.25配置：Single
最大漏极电流 (Abs) (ID)：21 AFET 技术：METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：1最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：94 W子类别：FET General Purpose Power
表面贴装：YES处于峰值回流温度下的最长时间：NOT SPECIFIED

AUIRF3315STRL 数据手册

 浏览型号AUIRF3315STRL的Datasheet PDF文件第2页浏览型号AUIRF3315STRL的Datasheet PDF文件第3页浏览型号AUIRF3315STRL的Datasheet PDF文件第4页浏览型号AUIRF3315STRL的Datasheet PDF文件第5页浏览型号AUIRF3315STRL的Datasheet PDF文件第6页浏览型号AUIRF3315STRL的Datasheet PDF文件第7页 
PD - 97733  
AUTOMOTIVE GRADE  
AUIRF3315S  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
D
VDSS  
RDS(on) max.  
150V  
82m  
l
Dynamic dV/dT Rating  
l 175°COperatingTemperature  
l Fast Switching  
G
ID  
21A  
l
Fully Avalanche Rated  
S
l Repetitive Avalanche Allowed up to  
Tjmax  
l Lead-Free,RoHSCompliant  
l Automotive Qualified *  
D
Description  
S
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and rugge-  
dized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in  
Automotive and a wide variety of other applications.  
D
G
D2Pak  
AUIRF3315S  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Max.  
21  
Units  
A
I
I
I
@ TC = 25°C  
@ TC = 100°C  
D
D
15  
84  
Pulsed Drain Current  
DM  
P
P
@TA = 25°C  
@TC = 25°C  
Maximum Power Dissipation  
Maximum Power Dissipation  
3.8  
94  
W
D
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.63  
± 20  
W/°C  
V
V
GS  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
350  
12  
mJ  
A
Repetitive Avalanche Energy  
EAR  
9.4  
mJ  
Peak Diode Recovery dv/dt  
Operating Junction and  
dv/dt  
T
J
2.5  
V/ns  
°C  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
300  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.6  
Units  
°C/W  
Junction-to-Case  
RJC  
RJA  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
10/3/11  
1234567...12

中文翻译

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AUIRF3315STRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3315STRR INFINEON

类似代替

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF3315SPBF INFINEON

功能相似

 HEXFET Power MOSFET

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