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AUIRF3504

更新时间： 2024-09-13 21:09:47
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 241K
描述
Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRF3504 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.71
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：368 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：87 A
最大漏极电流 (ID)：87 A最大漏源导通电阻：0.0092 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：143 W最大脉冲漏极电流 (IDM)：350 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF3504 数据手册

 浏览型号AUIRF3504的Datasheet PDF文件第2页浏览型号AUIRF3504的Datasheet PDF文件第3页浏览型号AUIRF3504的Datasheet PDF文件第4页浏览型号AUIRF3504的Datasheet PDF文件第5页浏览型号AUIRF3504的Datasheet PDF文件第6页浏览型号AUIRF3504的Datasheet PDF文件第7页 
PD - 97696A  
AUTOMOTIVE GRADE  
AUIRF3504  
Features  
HEXFET® Power MOSFET  
l Advanced Planar Technology  
l Low On-Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
D
V(BR)DSS  
40V  
7.8  
RDS(on) typ.  
Ω
m
G
max  
9.2  
Ω
m
S
ID  
87A  
l Lead-Free, RoHS Compliant  
l AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
S
D
G
TO-220AB  
AUIRF3504  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
87  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
61  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
@ T = 100°C  
C
350  
DM  
143  
0.95  
± 20  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
199  
368  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
AS (tested)  
IAR  
EAR  
See Fig. 12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
1234567...12

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