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IRF3205ZSPBF PDF预览

IRF3205ZSPBF

更新时间: 2024-12-01 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
13页 367K
描述
AUTOMOTIVE MOSFET

IRF3205ZSPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.6
Is Samacsys:N峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IRF3205ZSPBF 数据手册

 浏览型号IRF3205ZSPBF的Datasheet PDF文件第2页浏览型号IRF3205ZSPBF的Datasheet PDF文件第3页浏览型号IRF3205ZSPBF的Datasheet PDF文件第4页浏览型号IRF3205ZSPBF的Datasheet PDF文件第5页浏览型号IRF3205ZSPBF的Datasheet PDF文件第6页浏览型号IRF3205ZSPBF的Datasheet PDF文件第7页 
PD - 95129  
IRF3205ZPbF  
IRF3205ZSPbF  
IRF3205ZLPbF  
AUTOMOTIVE MOSFET  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
D
VDSS = 55V  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 6.5mΩ  
l
Lead-Free  
G
Description  
ID = 75A  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalanche rating . These features combine to make  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
TO-220AB  
D2Pak  
TO-262  
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
110  
78  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
@ T = 25°C  
C
75  
440  
170  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
1.1  
± 20  
W/°C  
V
V
GS  
EAS (Thermally limited)  
180  
250  
mJ  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.90  
–––  
62  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount)  
www.irf.com  
1
3/18/04  

IRF3205ZSPBF 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3205ZSTRR INFINEON

完全替代

HEXFET? Power MOSFET
IRF3205ZSTRLPBF INFINEON

类似代替

Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me
AUIRF3205ZS INFINEON

类似代替

HEXFET? Power MOSFET

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