Datasheet > IRF320LSPBF

IRF320LSPBF

更新时间： 2024-11-01 04:23:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	277K
描述
HEXFET㈢ Power MOSFET

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IRF320LSPBF 数据手册

PD - 95106

IRF3205SPbF

IRF3205LPbF

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 8.0mΩ

l Fully Avalanche Rated

l Lead-Free

I_D= 110A^ꢀ

Description

Advanced HEXFET^®Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETsarewellknownfor, providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest power

capabilityandthelowestpossibleon-resistanceinanyexistingsurface

mount package. The D²Pak is suitable for high current applications

because of its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

D²Pak

IRF3205SPbF

TO-262

IRF3205LPbF

The through-hole version (IRF3205L) is available for low-profile

applications.

Absolute Maximum Ratings

Parameter

Max.

110 ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

390

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.3

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

R_θJA

Junction-to-Ambient (PCB mounted, steady-state)*

–––

www.irf.com

03/11/04

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