Datasheet > IRF322

IRF322

更新时间： 2024-10-31 22:48:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	71K
描述
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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IRF322 数据手册

IRF320, IRF321,

IRF322, IRF323

Semiconductor

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,

N-Channel Power MOSFETs

July 1998

Features

Description

• 2.8A and 3.3A, 350V and 400V

• r = 1.8Ω and 2.5Ω

These are N-Channel enhancement mode silicon gate

power ﬁeld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

speciﬁed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA17404.

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Ordering Information

PART NUMBER

IRF320

PACKAGE

TO-204AA

BRAND

IRF320

IRF321

TO-204AA

IRF321

IRF322

IRF323

IRF322

IRF323

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

File Number 1569.3

5-1

12 3 4 5 6 7

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