5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRF3305
AUIRF3305 PDF预览

AUIRF3305

更新时间： 2024-11-29 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
12页 275K
描述
Advanced Planar Technology

阅读下载

中文翻译

获取价格

AUIRF3305 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.46Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：860 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (Abs) (ID)：140 A最大漏极电流 (ID)：140 A
最大漏源导通电阻：0.008 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：330 W
最大脉冲漏极电流 (IDM)：560 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF3305 数据手册

 浏览型号AUIRF3305的Datasheet PDF文件第2页浏览型号AUIRF3305的Datasheet PDF文件第3页浏览型号AUIRF3305的Datasheet PDF文件第4页浏览型号AUIRF3305的Datasheet PDF文件第5页浏览型号AUIRF3305的Datasheet PDF文件第6页浏览型号AUIRF3305的Datasheet PDF文件第7页 
PD - 96336  
AUTOMOTIVE MOSFET  
AUIRF3305  
HEXFET® Power MOSFET  
Features  
D
S
V(BR)DSS  
55V  
8m  
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
LowOn-Resistance  
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
RDS(on) max.  
ID  
Ω
G
140A  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
l
l
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Description  
SpecificallydesignedforAutomotiveapplications,thiscellular  
design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per  
silicon area. This benefit combined with the fast switching  
speed and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer with an  
extremely efficient and reliable device for use in Automotive  
and a wide variety of other applications.  
TO-220AB  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
140  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
99  
A
560  
PD @TC = 25°C  
330  
Power Dissipation  
W
W/°C  
V
2.2  
Linear Derating Factor  
VGS  
± 20  
Gate-to-Source Voltage  
EAS  
470  
860  
Single Pulse Avalanche Energy(Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (Tested )  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
TJ  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds(1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
0.45  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/02/10  
1234567...12

中文翻译

下载PDF

AUIRF3305 替代型号

型号 品牌 替代类型 描述 数据表
IRF3305PBF INFINEON

完全替代

 HEXFET㈢ Power MOSFET
IRF3305 INFINEON

类似代替

 AUTOMOTIVE MOSFET

与AUIRF3305相关器件

型号 品牌 获取价格 描述 数据表
AUIRF3315S INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRL INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3315STRR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRF3415 INFINEON

获取价格

 		ADVANCED PLANAR TECHNOLOGY, LOW ON-RESISTANCE
AUIRF3504 INFINEON

获取价格

 		Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
AUIRF3710Z INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZS INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZSTRL INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3710ZSTRR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF3805 INFINEON

获取价格

 		HEXFET? Power MOSFET

与AUIRF3305相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证