Datasheet > ASDM100N34KQ

ASDM100N34KQ

更新时间： 2024-09-14 17:15:55

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	1389K
描述
TO-252

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数据手册

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ASDM100N34KQ 数据手册

ASDM100N34KQ

100V N-Channel MOSFET

KEY CHARACTERISTICS

Product Summary

● High density cell design for lower Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

V DS

100

mΩ

R DS(on),Typ@ VGS=10 V

I D

Application

●Power switching application

●Hard switched and High frequency circuits

●Uninterruptible power supply

TO-252-2L Top View

Schematic diagram

Absolute Maximum Ratings (T_A=25℃ꢀunless otherwise noted)

Parameter Symbol

Limit

100

Unit

Drain-Source Voltage

VDS

VGS

I_D

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

136

I_DM

℃

Maximum Power Dissipation(Tc=25℃)

Single pulse avalanche energy^{(Note 2)}

P_D

130

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

℃/W

www.ascendsemi.com

0755-86970486

DEC 2018 Version2.0

1/8

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