Datasheet > ASDM10GN65P

ASDM10GN65P

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	344K
描述
TO-220

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中文翻译

获取价格

数据手册

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ASDM10GN65P 数据手册

ASDM10GN65P

650V Normally-OFF GaN

Features

Product Summary

 Low On-resistance

VDS

650

160

mΩ

 Low gate charge

DS(on),Typ@ VGS=6V

 Low intrinsic capacitance

 Extremely fast switching

Applications

 Resonant soft switching Converters

 Switch Mode Power Supplies

 Isolated DC/DC converters

TO-220-3L top view

Absolute Maximum Ratings(T_c=25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Test Condition

Drain-source voltage

V_DS

650

Gate-source voltage

V_GS

-10 to +7

T_C=25^oC

T_C=100^oC

Continuous drain current*

I_D

℃

-55 to 150

Operation and storage temperature

Tstg

Ascend Semicondutor Co.,Ltd

Aug 2020 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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