Datasheet > ASDM100P13KQ

ASDM100P13KQ

更新时间： 2024-09-16 17:15:47

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	386K
描述
TO-252

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ASDM100P13KQ 数据手册

ASDM100P13KQ

-100V P-Channel MOSFET

General Features

● V_DS=-100V,I_D=-13A

Product Summary

R_DS(ON)<200mΩ @ V_GS=-10V (Typ:170mΩ)

● Super high dense cell design

V_DSS

-100

170

-13

R_DS(ON)-Typ

I_D

mΩ

● Advanced trench process technology

● Reliable and rugged

● High density celldesign for ultra low on-resistance

Application

● Power switch

● DC/DC converters

TO-252

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter Symbol

V^DS

Limit

-100

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

-13

-9.2

-30

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.32

110

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case (Note 2)

R_θJc

3.13

℃/W

Ascend Semicondutor Co.,Ltd

DEC 2020 Version1.0

1/8

12 3 4 5 6 7 8

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