Datasheet > ASDM100R160NP

ASDM100R160NP

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1610K
描述
TO-220

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ASDM100R160NP 数据手册

ASDM100R160NP

100V N-Channel Power MOSFET

General Description

● Low R_DS(on)& FOM

Product Summary

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

V DS

100

R DS(on),Typ@ VGS=10 V

I D

mΩ

Applications

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

T_C=100℃

28.5

180

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

Tc=25℃

Total Power Dissipation ^C

P_D

Tc=100℃

28.8

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

1.35

1.7

www.ascendsemi.com

0755-86970486

May 2019 Version1.0

1/7

12 3 4 5 6 7

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