Datasheet > ASDM100R520PKQ

ASDM100R520PKQ

更新时间： 2024-10-31 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	950K
描述
TO-252

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中文翻译

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数据手册

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ASDM100R520PKQ 数据手册

ASDM100R520PKQ

-100V P-Channel MOSFET

Features

Product Summary

 Advanced Split Gate Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

V DS

-100

mΩ

R DS(on),Typ@ VGS=-10 V

I D

-35

Application

 Load Switch

 PWM Application

 Power management

P-channel

TO-252

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-100

±20

Gate-Source Voltage

T_C= 25℃

-35

I_D

Continuous Drain Current

T_C= 100℃

-23

Pulsed Drain Current ^note1

Single Pulsed Avalanche Energy ^note2

Power Dissipation

I_DM

E_AS

-140

P_D

T_C= 25℃

140

Thermal Resistance, Junction to Case

R_θJC

1.1

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +175

NOV 2020 Version1.0

1/8

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7 8

中文翻译

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